inchange semiconductor isc product specification isc silicon npn power transistor MJ16006 description collector-emitter sustaining voltage- : v ceo(sus) = 450v(min) high switching speed applications designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. they are partic- ularly suited for line operated switch-mode applications. typical applications: switching regulators inverters solenoid and relay drivers motor controls deflection circuits absolute maximum ratings(t a =25 ) symbol parameter value unit v cev collector-emitter voltage 850 v v ceo(sus) collector-emitter voltage 450 v v ebo emitter-base voltage 6 v i c collector current-continuous 8 a i cm collector current-peak 16 a i b b base current-continuous 6 a i bm base current-peak 12 a p c collector power dissipation@t c =25 150 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.17 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor MJ16006 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ; i b =0 450 v v ce (sat)- 1 collector-emitter saturation voltage i c = 3a; i b = 0.4a b 2.5 v v ce (sat)- 2 collector-emitter saturation voltage i c = 5a; i b = 0.66a b i c = 5a; i b = 0.66a,t b c =100 3.0 3.0 v v be (sat) base-emitter saturation voltage i c = 5a; i b = 0.66a b i c = 5a; i b = 0.66a,t b c =100 1.5 1.5 v i cev collector cutoff current v cev =850v;v be (off) =1.5v v cev =850v;v be (off) =1.5v;t c =100 0.25 1.5 ma i cer collector cutoff current v ce = 850v; r be = 50 ,t c = 100 2.5 ma i ebo emitter cutoff current v eb = 6v; i c =0 1.0 ma h fe dc current gain i c = 8a ; v ce = 5v 5 c ob output capacitance i e = 0; v cb = 10v; f test =1.0khz 350 pf switching times;resistive load t d delay time 20 50 ns t r rise time 85 250 ns t s storage time 1000 2500 ns t f fall time i c = 5a , v cc = 250v; r b2 = 4 ; i b1 = 0.66a; i b2 = -1.3a;pw= 30s; duty cycle 2.0% 70 250 ns isc website www.iscsemi.cn 2
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